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| 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAFX75N10A Features * * * * * * * Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request 100 Volts 75 Amps 20 m N-CHANNEL ENHANCEMENT MODE POWER MOSFET Maximum Ratings @ 25C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ 25C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM JC MAX. 100 100 +/-20 +/-30 75 60 300 75 30 tbd 5.0 300 -55 to +150 -55 to +150 75 300 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts C C Amps Amps C/W Drain-to-Gate Breakdown Voltage @ TJ 25C, RGS= 1 M Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100C Tj= 25C Tj= Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode @ IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Mechanical Outline DRAIN GATE SOURCE Datasheet# MSC0301A MSAFX75N10A Electrical Parameters @ 25C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) SYMBOL BVDSS BVDSS/TJ VGS(th) IGSS IDSS RDS(on) CONDITIONS VGS = 0 V, I D = 250 A MIN 100 TYP. tbd MAX UNIT V V/C Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) Reverse Recovery Time (Body Diode) Reverse Recovery Charge gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd VSD trr Qrr VDS = VGS, ID = 4 mA VGS = 20V DC, VDS = 0 T J = 25C T J = 125C VDS =0.8*BVDSS TJ = 25C VGS = 0 V T J = 125C VGS= 10V, I D= 37.5A T J = 25C I D= 75A T J = 25C I D= 37.5A T J = 125C VDS 10 V; I D = 75 A VGS = 0 V, V DS = 25 V, f = 1 MHz 2.0 4.0 100 200 200 1000 0.02 0.02 0.035 30 4500 1600 800 20 60 80 60 180 36 85 V nA A 25 S pF VGS = 10 V, V DS = 50 V, ID = 37.5 A, R G = 2.00 VGS = 10 V, V DS = 50V, I D = 37.5A IF = IS, VGS = 0 V IF = 10 A, -di/dt = 100 A/ s, IF = 10 A, di/dt = 100 A/ s, 25 C 125 C 25 C 125 C 30 110 110 90 260 70 160 1.75 200 300 ns nC V ns C tbd tbd Notes (1) (2) Pulse test, t 300 s, duty cycle 2% Microsemi Corp. does not manufacture the mosfet die; contact company for details. |
Price & Availability of MSAFX75N10A
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